FQI3N3

FQI3N30TU vs FQI3N30 vs FQI3N30TUFSC

 
PartNumberFQI3N30TUFQI3N30FQI3N30TUFSC
DescriptionMOSFET 300V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current3.2 A--
Rds On Drain Source Resistance1.65 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.75 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.084199 oz--
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI3N30TU MOSFET 300V N-Channel QFET
FQI3N30 신규 및 오리지널
FQI3N30TUFSC 신규 및 오리지널
ON Semiconductor
ON Semiconductor
FQI3N30TU MOSFET N-CH 300V 3.2A I2PAK
Top