 |  | | |
| PartNumber | FQI4N80TU | FQI4N80 | FQI4N80C |
| Description | MOSFET 800V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 3.9 A | - | - |
| Rds On Drain Source Resistance | 2.8 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Series | FQI4N80 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 3.8 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.073511 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI4N80TU | MOSFET 800V N-Channel QFET | |
| FQI4N80 | 신규 및 오리지널 | ||
| FQI4N80C | 신규 및 오리지널 | ||
| FQI4N80TUFSC | 신규 및 오리지널 | ||
ON Semiconductor |
FQI4N80TU | Darlington Transistors MOSFET 800V N-Channel QFET |