 |  | | |
| PartNumber | FQP7P06 | FQP7N80C/8N80C | FQP7N90C |
| Description | MOSFET 60V P-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 6.7 A | - | - |
| Rds On Drain Source Resistance | 410 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP7P06 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7.5 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | FQP7P06_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP7P06 | MOSFET 60V P-Channel QFET | |
| FQP7P20 | MOSFET 200V P-Channel QFET | ||
| FQP7N80C/8N80C | 신규 및 오리지널 | ||
| FQP7N90C | 신규 및 오리지널 | ||
| FQP7P06 VZL-5 | 신규 및 오리지널 | ||
ON Semiconductor |
FQP7P06 | MOSFET P-CH 60V 7A TO-220 | |
| FQP7P20 | MOSFET P-CH 200V 7.3A TO-220 |