 |  | | |
| PartNumber | FQU2N50BTU | FQU2N50 | FQU2N50B |
| Description | MOSFET Power MOSFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 1.6 A | - | - |
| Rds On Drain Source Resistance | 5.3 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 6.3 mm | - | - |
| Length | 6.8 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 2.5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 1.3 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 70 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQU2N50BTU-WS | MOSFET Power MOSFET | |
| FQU2N50BTU | MOSFET Power MOSFET | ||
| FQU2N50 | 신규 및 오리지널 | ||
| FQU2N50B | 신규 및 오리지널 | ||
| FQU2N50C | 신규 및 오리지널 | ||
| FQU2N50BTU_WS | IGBT Transistors MOSFET Power MOSFET | ||
ON Semiconductor |
FQU2N50BTU | MOSFET N-CH 500V 1.6A IPAK | |
| FQU2N50BTU-WS | MOSFET N-CH 500V 1.6A IPAK |