 | | | |
| PartNumber | FS150R12KT4 | FS150R12KT4B11BOSA1 | FS150R12KT4B9BOSA1 |
| Description | IGBT Modules IGBT MODULE 1200V, 150A | IGBT MODULE VCES 650V 150A | Trench and Field Stop IGBT4un |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Package / Case | Econo 3 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 122 mm | - | - |
| Width | 62 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FS150R12KT4BOSA1 SP000369613 | - | - |
| Unit Weight | 10.582189 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
FS150R12KT4_B11 | IGBT Modules N-CH 1.2KV 150A | |
| FS150R12KT4 | IGBT Modules IGBT MODULE 1200V, 150A | ||
| FS150R12KT4_B9 | IGBT Modules IGBT Module 150A 1700V | ||
| FS150R12KT4B11BOSA1 | IGBT MODULE VCES 650V 150A | ||
| FS150R12KT4BOSA1 | IGBT MODULE 1200V 150A | ||
| FS150R12KT4B9BOSA1 | Trench and Field Stop IGBT4un | ||
| FS150R12KT4PB11BPSA1 | MOD IGBT LOW PWR ECONO3-4 | ||
| FS150R12KT4PBPSA1 | MOD IGBT LOW PWR ECONO3-4 | ||
| FS150R12KT4-B11 | 신규 및 오리지널 | ||
| FS150R12KT4-B11ENG | 신규 및 오리지널 | ||
| FS150R12KT4-B9 | 신규 및 오리지널 | ||
| FS150R12KT4B11 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | ||
| FS150R12KT4G | 신규 및 오리지널 | ||
| FS150R12KT4_B11 | IGBT Modules N-CH 1.2KV 150A | ||
| FS150R12KT4 | IGBT Modules IGBT MODULE 1200V, 150A | ||
| FS150R12KT4_B9 | IGBT Modules IGBT Module 150A 1700V |