FS30R06W

FS30R06W1E3 vs FS30R06W1E3BOMA1 vs FS30R06W1E3B11BOMA1

 
PartNumberFS30R06W1E3FS30R06W1E3BOMA1FS30R06W1E3B11BOMA1
DescriptionIGBT Modules N-CH 600V 45AIGBT MODULE 600V 30AMOD IGBT LOW PWR EASY1B-2
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V--
Continuous Collector Current at 25 C45 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation150 W--
Package / CaseEASY1B--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height12 mm--
Length62.8 mm--
Width33.8 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity24--
SubcategoryIGBTs--
Part # AliasesFS30R06W1E3BOMA1 SP000223650--
Unit Weight0.846575 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
FS30R06W1E3_B11 IGBT Modules IGBT Module 30A 600V
FS30R06W1E3 IGBT Modules N-CH 600V 45A
FS30R06W1E3BOMA1 IGBT MODULE 600V 30A
FS30R06W1E3B11BOMA1 MOD IGBT LOW PWR EASY1B-2
FS30R06W1E3-ENG 신규 및 오리지널
FS30R06W1E3_B11 IGBT Modules IGBT Module 30A 600V
FS30R06W1E3 IGBT Modules N-CH 600V 45A
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