 | | | |
| PartNumber | FS35R12KT3 | FS35R12KE3G | FS35R12KE3GBOSA1 |
| Description | IGBT Modules N-CH 1.2KV 55A | IGBT Modules 1200V 35A 3-PHASE | MOD IGBT LOW PWR ECONO2-6 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Hex | Hex | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Continuous Collector Current at 25 C | 55 A | 55 A | - |
| Package / Case | Econo 2 | EconoPACK 2B | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Packaging | Tray | Tray | - |
| Height | 17 mm | 17 mm | - |
| Length | 107.5 mm | 93 mm | - |
| Width | 45 mm | 45 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FS35R12KT3BOSA1 SP000100448 | FS35R12KE3GBOSA1 SP000100412 | - |
| Unit Weight | 6.349313 oz | 6.349313 oz | - |
| RoHS | - | N | - |
| Collector Emitter Saturation Voltage | - | 2.15 V | - |
| Gate Emitter Leakage Current | - | 400 nA | - |
| Pd Power Dissipation | - | 200 W | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
FS35R12KT3 | IGBT Modules N-CH 1.2KV 55A | |
| FS35R12KE3G | IGBT Modules 1200V 35A 3-PHASE | ||
| FS35R12KE3GBOSA1 | MOD IGBT LOW PWR ECONO2-6 | ||
| FS35R12KT3BOSA1 | MOD IGBT LOW PWR ECONO2-6 | ||
| FS35R12KE3 | 신규 및 오리지널 | ||
| FS35R12KE4 | 신규 및 오리지널 | ||
| FS35R12KT3 | IGBT Modules N-CH 1.2KV 55A | ||
| FS35R12KE3G | IGBT Modules 1200V 35A 3-PHASE |