 | | | |
| PartNumber | FZ800R12KE3 | FZ800R12KE3HOSA1 | FZ800R12KS4B2NOSA1 |
| Description | IGBT Modules 1200V 800A | IGBT MODULE 1200V 800A | MODULE IGBT A-IHM130-1 |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Continuous Collector Current at 25 C | 800 A | - | - |
| Package / Case | 62 mm | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 36.5 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FZ800R12KE3HOSA1 SP000100782 | - | - |
| Unit Weight | 12 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
FZ800R12KE3 | IGBT Modules 1200V 800A | |
| FZ800R12KS4_B2 | IGBT Modules N-CH 1.2KV 1.2KA | ||
| FZ800R12KE3HOSA1 | IGBT MODULE 1200V 800A | ||
| FZ800R12KS4B2NOSA1 | MODULE IGBT A-IHM130-1 | ||
| FZ800R12KL4C | IGBT Modules 1200V 800A SINGLE | ||
| FZ800R12KF4 | IGBT Modules 1200V 800A SINGLE | ||
| FZ800R12KS4_B2 | IGBT Modules N-CH 1.2KV 1.2KA | ||
| FZ800R12KE3 | IGBT Modules 1200V 800A | ||
| FZ800R12KF1 | 신규 및 오리지널 | ||
| FZ800R12KF4-S1 | 신규 및 오리지널 | ||
| FZ800R12KF4C | 신규 및 오리지널 | ||
| FZ800R12KF4S1 | 신규 및 오리지널 | ||
| FZ800R12KF5 | 신규 및 오리지널 | ||
| FZ800R12KL1 | 신규 및 오리지널 | ||
| FZ800R12KL4 | 신규 및 오리지널 | ||
| FZ800R12KS4 | 신규 및 오리지널 | ||
| FZ800R12KS4-B2 | 신규 및 오리지널 | ||
| FZ800R12KS4-S2 | 신규 및 오리지널 | ||
| FZ800R12KL4CNOSA1 | Insulated Gate Bipolar Transisto |