 | | | |
| PartNumber | GS6100 | GS61001 | GS61002 |
| Description | |||
| Manufacturer | GaN Systems | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Reel | - | - |
| Mounting Style | SMD/SMT | - | - |
| Technology | GaN | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Rds On Drain Source Resistance | 15 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Qg Gate Charge | 6.6 nC | - | - |
| Channel Mode | Enhancement | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
GaN Systems |
GS61004B-E01-MR | MOSFET 100V 45A E-Mode GaN | |
| GS61008P-E05-MR | MOSFET 100V 80A E-Mode GaN | ||
| GS6100 | 신규 및 오리지널 | ||
| GS61001 | 신규 및 오리지널 | ||
| GS61002 | 신규 및 오리지널 | ||
| GS61008P-E05 | 신규 및 오리지널 | ||
| GS61008P-E05-B | GAN POWER TRANSISTOR | ||
| GS61008P-E05-TY | MOSFET 100V 90A E-Mode GaN Preproduction Units | ||
| GS61008P-EVBHF | Power Management IC Development Tools 100V, 7mOhm, Half Bridge Eval Board | ||
| GS61008P-E04-TY | IGBT Transistors MOSFET 100V 90A E-Mode GaN Preproduction Units | ||
| GS61008P-E03-TY | MOSFET 100V, 90A, E-Mode Preproduction Units |