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| PartNumber | GS8128218GD-333 | GS8128218GD-333I | GS8128218GD-333IV |
| Description | SRAM 2.5/3.3V 8M x 18 144M | SRAM 2.5/3.3V 8M x 18 144M | SRAM 1.8/2.5V 8M x 18 144M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 144 Mbit | 144 Mbit | 144 Mbit |
| Organization | 8 M x 18 | 8 M x 18 | 8 M x 18 |
| Access Time | 4.5 ns | 4.5 ns | 4.5 ns |
| Maximum Clock Frequency | 333 MHz | 333 MHz | 333 MHz |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 2.7 V |
| Supply Voltage Min | 2.3 V | 2.3 V | 1.7 V |
| Supply Current Max | 410 mA, 550 mA | 390 mA, 530 mA | 390 mA, 530 mA |
| Minimum Operating Temperature | 0 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 100 C | + 100 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | BGA-165 | BGA-165 | BGA-165 |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | SDR | SDR |
| Series | GS8128218GD | GS8128218GD | GS8128218GD |
| Type | SCD/DCD; PL/FT | SCD/DCD; PL/FT | SCD/DCD; PL/FT |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
GSI Technology |
GS8128218GD-333 | SRAM 2.5/3.3V 8M x 18 144M | |
| GS8128218GD-333I | SRAM 2.5/3.3V 8M x 18 144M | ||
| GS8128218GD-333V | SRAM 1.8/2.5V 8M x 18 144M | ||
| GS8128218GD-333IV | SRAM 1.8/2.5V 8M x 18 144M |