 |  | | |
| PartNumber | GS881E36CD-250IV | GS881E36CD-250I | GS881E36CD-250 |
| Description | SRAM 1.8/2.5V 256K x 32 8M | SRAM 2.5 or 3.3V 256K x 32 8M | SRAM 2.5 or 3.3V 256K x 32 8M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| Memory Size | 9 Mbit | - | - |
| Organization | 256 k x 36 | - | - |
| Access Time | 5.5 ns | - | - |
| Maximum Clock Frequency | 250 MHz | - | - |
| Interface Type | Parallel | - | - |
| Supply Voltage Max | 2.7 V | - | - |
| Supply Voltage Min | 1.7 V | - | - |
| Supply Current Max | 160 mA, 200 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | BGA-165 | - | - |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | - | - |
| Series | GS881E36CD | GS881E36CD | GS881E36CD |
| Type | DCD | - | - |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 66 | 72 | 72 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
GSI Technology |
GS881E36CD-250IV | SRAM 1.8/2.5V 256K x 32 8M | |
| GS881E36CD-250V | SRAM 1.8/2.5V 256K x 32 8M | ||
| GS881E36CD-250I | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E36CD-250 | SRAM 2.5 or 3.3V 256K x 32 8M |