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| PartNumber | HN1C01FU-GR,LF | HN1C01FU-GR,LF(T |
| Description | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | Trans GP BJT NPN 50V 0.15A 6-Pin SSOP (Alt: HN1C01FU-GR,LF(T) |
| Manufacturer | Toshiba | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-363-6 | - |
| Transistor Polarity | NPN | - |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | 50 V | - |
| Collector Base Voltage VCBO | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 100 mV | - |
| Maximum DC Collector Current | 150 mA | - |
| Gain Bandwidth Product fT | 80 MHz | - |
| Maximum Operating Temperature | + 125 C | - |
| Series | HN1C01 | - |
| DC Current Gain hFE Max | 400 at 2 mA | - |
| Packaging | Reel | - |
| Brand | Toshiba | - |
| DC Collector/Base Gain hfe Min | 120 | - |
| Pd Power Dissipation | 200 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.000265 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
HN1C01FU-GR,LF | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | |
| HN1C01FU-GR,LF | Trans GP BJT NPN 50V 0.15A 6-Pin US | ||
| HN1C01FU-GR,LF(T | Trans GP BJT NPN 50V 0.15A 6-Pin SSOP (Alt: HN1C01FU-GR,LF(T) |