 |  | | |
| PartNumber | HN1C03FU-B(TE85L,F | HN1C03FU-B(TE85L) | HN1C03FU-B(TE85L) SOT |
| Description | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | US-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 25 V | - | - |
| Collector Emitter Saturation Voltage | 42 mV | - | - |
| Maximum DC Collector Current | 300 mA | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HN1C03 | - | - |
| DC Current Gain hFE Max | 1200 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
HN1C03FU-B(TE85L,F | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 | |
| HN1C03FU-B(TE85L,F | Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 | ||
| HN1C03FU-B(TE85L) | 신규 및 오리지널 | ||
| HN1C03FU-B(TE85L) SOT | 신규 및 오리지널 |