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| PartNumber | HUF76633S3ST_F085 | HUF76633S3ST | HUF76633S3ST-F085 |
| Description | RF Bipolar Transistors MOSFET UltraFET Power MOSFET | MOSFET N-CH 100V 38A D2PAK | ULTRAFET POWER MOSFET |
| Manufacturer | Fairchild Semiconductor | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 183 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 6 ns | - | - |
| Rise Time | 16 ns | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Id Continuous Drain Current | 39 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 46 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Qg Gate Charge | 56 nC | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| HUF76633S3ST_F085 | RF Bipolar Transistors MOSFET UltraFET Power MOSFET | ||
ON Semiconductor |
HUF76633S3ST | MOSFET N-CH 100V 38A D2PAK | |
| HUF76633S3ST-F085 | ULTRAFET POWER MOSFET |