 |  |  | |
| PartNumber | IGB10N60T | IGB10N60TATMA1 | IGB10N60T G10T60 |
| Description | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 24 A | 24 A | - |
| Pd Power Dissipation | 110 W | 110 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | TRENCHSTOP IGBT | TRENCHSTOP IGBT | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | TRENCHSTOP | TRENCHSTOP | - |
| Part # Aliases | IGB10N60TATMA1 IGB1N6TXT SP000456678 | IGB10N60T IGB1N6TXT SP000456678 | - |
| Unit Weight | 0.054904 oz | 0.050442 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IGB10N60T | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech | |
| IGB10N60TATMA1 | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech | ||
| IGB10N60TATMA1 | IGBT 600V 20A 110W TO263-3 | ||
| IGB10N60TATMA1-CUT TAPE | 신규 및 오리지널 | ||
| IGB10N60T G10T60 | 신규 및 오리지널 | ||
| IGB10N60TXT | Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB10N60TATMA1) | ||
| IGB10N60T | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech |