 | |  | |
| PartNumber | IGB30N60H3 | IGB30N60T | IGB30N60H3ATMA1 |
| Description | IGBT Transistors 600v Hi-Speed SW IGBT | IGBT Transistors LOW LOSS IGBT TECH 600V 30A | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.95 V | 1.95 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 60 A | 60 A | - |
| Pd Power Dissipation | 187 W | 187 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | HighSpeed 3 | TRENCHSTOP IGBT | HighSpeed 3 |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IGB30N60H3ATMA1 IGB3N6H3XT SP000852240 | IGB30N60TATMA1 IGB3N6TXT SP000095765 | IGB30N60H3 IGB3N6H3XT SP000852240 |
| Unit Weight | 0.077603 oz | 0.068654 oz | - |
| Height | - | 4.4 mm | - |
| Length | - | 10 mm | - |
| Width | - | 9.25 mm | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IGB30N60H3 | IGBT Transistors 600v Hi-Speed SW IGBT | |
| IGB30N60T | IGBT Transistors LOW LOSS IGBT TECH 600V 30A | ||
| IGB30N60H3ATMA1 | IGBT 600V 60A 187W TO263-3 | ||
| IGB30N60TATMA1 | IGBT 600V 60A 187W TO263-3-2 | ||
Infineon Technologies |
IGB30N60H3ATMA1 | IGBT Transistors IGBT PRODUCTS | |
| IGB30N60TATMA1 | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop | ||
| IGB30H60H3 | 신규 및 오리지널 | ||
| IGB30N60 G30N60 | 신규 및 오리지널 | ||
| IGB30N60H3XKSA1 | - Bulk (Alt: IGB30N60H3XKSA1) | ||
| IGB30N60T PB-FREE | 신규 및 오리지널 | ||
| IGB30N60T | IGBT Transistors LOW LOSS IGBT TECH 600V 30A | ||
| IGB30N60H3 | IGBT Transistors 600v Hi-Speed SW IGBT |