IGB30N60H

IGB30N60H3 vs IGB30N60H3ATMA1 vs IGB30N60H3XKSA1

 
PartNumberIGB30N60H3IGB30N60H3ATMA1IGB30N60H3XKSA1
DescriptionIGBT Transistors 600v Hi-Speed SW IGBTIGBT Transistors IGBT PRODUCTS- Bulk (Alt: IGB30N60H3XKSA1)
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-263-3TO-263-3-
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation187 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3HighSpeed 3-
PackagingReelReel-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity1000--
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIGB30N60H3ATMA1 IGB3N6H3XT SP000852240IGB30N60H3 IGB3N6H3XT SP000852240-
Unit Weight0.077603 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IGB30N60H3 IGBT Transistors 600v Hi-Speed SW IGBT
IGB30N60H3ATMA1 IGBT 600V 60A 187W TO263-3
Infineon Technologies
Infineon Technologies
IGB30N60H3ATMA1 IGBT Transistors IGBT PRODUCTS
IGB30N60H3XKSA1 - Bulk (Alt: IGB30N60H3XKSA1)
IGB30N60H3 IGBT Transistors 600v Hi-Speed SW IGBT
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