IGP15N6

IGP15N60T vs IGP15N60 vs IGP15N60F

 
PartNumberIGP15N60TIGP15N60IGP15N60F
DescriptionIGBT Transistors LOW LOSS IGBT TECH 600V 15A
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C26 A--
Pd Power Dissipation130 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP IGBT--
PackagingTube--
Height9.25 mm--
Length10 mm--
Width4.4 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity500--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGP15N60TXKSA1 IGP15N6TXK SP000683044--
Unit Weight0.211644 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IGP15N60T IGBT Transistors LOW LOSS IGBT TECH 600V 15A
IGP15N60TXKSA1 IGBT 600V 30A 130W TO220-3
Infineon Technologies
Infineon Technologies
IGP15N60TXKSA1 IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
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IGP15N60T IGBT Transistors LOW LOSS IGBT TECH 600V 15A
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