 | | | |
| PartNumber | IGW25N120H3 | IGW25T120 | IGW25N120H3FKSA1 |
| Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors LOW LOSS IGBT TECH 1200V 50A | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 2.05 V | 1.7 V | 2.05 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 50 A | 50 A | 50 A |
| Pd Power Dissipation | 326 W | 190 W | 326 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Series | HighSpeed 3 | TRENCHSTOP IGBT | HighSpeed 3 |
| Packaging | Tube | Tube | Tube |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IGW25N120H3FKSA1 IGW25N12H3XK SP000674424 | IGW25T120FKSA1 IGW25T12XK SP000013887 | IGW25N120H3 IGW25N12H3XK SP000674424 |
| Unit Weight | 1.340411 oz | 1.340411 oz | 0.156264 oz |
| Height | - | 20.9 mm | - |
| Length | - | 15.9 mm | - |
| Width | - | 5.3 mm | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IGW25N120H3 | IGBT Transistors IGBT PRODUCTS | |
| IGW25T120 | IGBT Transistors LOW LOSS IGBT TECH 1200V 50A | ||
| IGW25N120H3FKSA1 | IGBT Transistors IGBT PRODUCTS | ||
| IGW25N120H3FKSA1 | IGBT 1200V 50A 326W TO247-3 | ||
| IGW25T120FKSA1 | IGBT 1200V 50A 190W TO247-3 | ||
Infineon Technologies |
IGW25T120FKSA1 | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop | |
| IGW25N120 | 신규 및 오리지널 | ||
| IGW25N120A | 신규 및 오리지널 | ||
| IGW25N120H3,G25H1203 | 신규 및 오리지널 | ||
| IGW25N120T | 신규 및 오리지널 | ||
| IGW25T12 | 신규 및 오리지널 | ||
| IGW25T120 G25T120 | 신규 및 오리지널 | ||
| IGW25T120F | 신규 및 오리지널 | ||
| IGW25T120FKSA1 , 2SC5181 | 신규 및 오리지널 | ||
| IGW25N120H3XK | IGBT Transistors IGBT PRODUCTS | ||
| IGW25N120H3 | IGBT Transistors IGBT PRODUCTS | ||
| IGW25T120 | IGBT Transistors LOW LOSS IGBT TECH 1200V 25A |