| PartNumber | IKW40N120CS6XKSA1 | IKW40N120H3 | IKW40N120H3FKSA1 |
| Description | IGBT Transistors INDUSTRY 14 | IGBT Transistors IGBT PRODUCTS | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 1.85 V | 2.05 V | 2.7 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
| Pd Power Dissipation | 500 W | 483 W | 483 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | IGBT6 | HighSpeed 3 | HighSpeed 3 |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 80 A | 80 A | 80 A |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IKW40N120CS6 | IKW40N120H3FKSA1 IKW4N12H3XK SP000674416 | IKW40N120H3 IKW4N12H3XK SP000674416 |
| Unit Weight | - | 1.340411 oz | 0.191185 oz |