IMX17T

IMX17T108 vs IMX17T110

 
PartNumberIMX17T108IMX17T110
DescriptionBipolar Transistors - BJT DUAL NPN/NPNTRANS 2NPN 50V 0.5A 6SMT
ManufacturerROHM SemiconductorRohm Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSMT-6-
Transistor PolarityNPN-
ConfigurationDual-
Collector Emitter Voltage VCEO Max50 V-
Collector Base Voltage VCBO60 V-
Emitter Base Voltage VEBO5 V-
Collector Emitter Saturation Voltage0.6 V-
Maximum DC Collector Current0.5 A-
Gain Bandwidth Product fT250 MHz-
Maximum Operating Temperature+ 150 C-
DC Current Gain hFE Max390-
Height1.1 mm-
Length2.9 mm-
PackagingReelDigi-ReelR Alternate Packaging
Width1.6 mm-
BrandROHM Semiconductor-
Continuous Collector Current500 mA-
DC Collector/Base Gain hfe Min120-
Pd Power Dissipation300 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # AliasesIMX17-
Series--
Package Case-SC-74, SOT-457
Mounting Type-Surface Mount
Supplier Device Package-SMT6
Power Max-300mW
Transistor Type-2 NPN (Dual)
Current Collector Ic Max-500mA
Voltage Collector Emitter Breakdown Max-50V
DC Current Gain hFE Min Ic Vce-120 @ 100mA, 3V
Vce Saturation Max Ib Ic-600mV @ 50mA, 500mA
Current Collector Cutoff Max-100nA (ICBO)
Frequency Transition-250MHz
제조사 부분 # 설명 RFQ
IMX17T108 Bipolar Transistors - BJT DUAL NPN/NPN
IMX17T110 TRANS 2NPN 50V 0.5A 6SMT
IMX17T108 TRANS 2NPN 50V 0.5A 6SMT
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