IPA0

IPA093N06N3 G vs IPA093N06N3GXKSA1 vs IPA086N10N3GXKSA1

 
PartNumberIPA093N06N3 GIPA093N06N3GXKSA1IPA086N10N3GXKSA1
DescriptionMOSFET N-Ch 60V 43A TO220FP-3 OptiMOS 3MOSFET MV POWER MOSMOSFET N-CH 100V 45A TO220-FP
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current43 A--
Rds On Drain Source Resistance9.3 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge36 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation33 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height16.15 mm16.15 mm-
Length10.65 mm10.65 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.85 mm4.85 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min51 S--
Fall Time5 ns--
Product TypeMOSFETMOSFET-
Rise Time40 ns--
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPA093N06N3GXKSA1 IPA93N6N3GXK SP000451088G IPA093N06N3 IPA93N6N3GXK SP000451088-
Unit Weight0.211644 oz0.211644 oz-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPA093N06N3 G MOSFET N-Ch 60V 43A TO220FP-3 OptiMOS 3
IPA086N10N3GXKSA1 MOSFET N-CH 100V 45A TO220-FP
IPA093N06N3GXKSA1 MOSFET N-CH 60V 43A TO220-3-31
IPA093N06N3 G Darlington Transistors MOSFET N-Ch 60V 43A TO220FP-3 OptiMOS 3
Infineon Technologies
Infineon Technologies
IPA093N06N3GXKSA1 MOSFET MV POWER MOS
IPA093N06N3GXK Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IPA093N06N3GXKSA1)
IPA086N10N3GXKSA1 , 2SD1 신규 및 오리지널
IPA093N06N3G Trans MOSFET N-CH 60V 43A 3-Pin TO-220 Tube (Alt: SP000451088)
IPA093N06N3G XKSA1 신규 및 오리지널
IPA093N06N3GXKSA1 , 2SD1 신규 및 오리지널
IPA09N03LA 신규 및 오리지널
IPA093N06N3 신규 및 오리지널
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