IPB037N06N3 stock, IPB037N06N3, IPB037N06N3GATMA1


PartNumber	IPB037N06N3GATMA1	IPB037N06N3 G
Description	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-263-3	TO-263-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	90 A	90 A
Rds On Drain Source Resistance	3 mOhms	3 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	98 nC	98 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	188 W	188 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	4.4 mm	4.4 mm
Length	10 mm	10 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	9.25 mm	9.25 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	61 S	61 S
Fall Time	5 ns	5 ns
Product Type	MOSFET	MOSFET
Rise Time	70 ns	70 ns
Factory Pack Quantity	1000	1000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	40 ns	40 ns
Typical Turn On Delay Time	30 ns	30 ns
Part # Aliases	G IPB037N06N3 IPB37N6N3GXT SP000397986	IPB037N06N3GATMA1 IPB37N6N3GXT SP000397986
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "IPB037N06N3", Match & Start with "IPB037N06N3" - Total : 6

제조사	부분 #	설명
Infineon Technologies	IPB037N06N3GATMA1	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	IPB037N06N3 G	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	IPB037N06N3GATMA1	MOSFET N-CH 60V 90A TO263-3
	IPB037N06N3 G	Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	IPB037N06N3	신규 및 오리지널
	IPB037N06N3G	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986)

IPB037N06N3