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| PartNumber | IPB054N06N3 G | IPB054N06N3GATMA1 | IPB054N08N3 G |
| Description | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 80 V |
| Id Continuous Drain Current | 80 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 4.4 mOhms | 4.4 mOhms | 4.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 82 nC | 82 nC | 69 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 115 W | 115 W | 150 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 47 S | 47 S | 52 S |
| Fall Time | 9 ns | 9 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 68 ns | 68 ns | 66 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | 32 ns | 38 ns |
| Typical Turn On Delay Time | 24 ns | 24 ns | 18 ns |
| Part # Aliases | IPB054N06N3GATMA1 IPB54N6N3GXT SP000446782 | G IPB054N06N3 IPB54N6N3GXT SP000446782 | IPB054N08N3GATMA1 IPB54N8N3GXT SP000395166 |
| Unit Weight | 0.068654 oz | 0.139332 oz | 0.139332 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB054N06N3 G | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | |
| IPB054N06N3GATMA1 | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | ||
| IPB054N08N3GATMA1 | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | ||
| IPB054N08N3 G | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | ||
| IPB054N06N3GATMA1 | MOSFET N-CH 60V 80A TO263-3 | ||
| IPB054N08N3GATMA1 | MOSFET N-CH 80V 80A TO263-3 | ||
| IPB054N06N3GATMA1-CUT TAPE | 신규 및 오리지널 | ||
| IPB054N08N3GATMA1-CUT TAPE | 신규 및 오리지널 | ||
| IPB054N08N3GXT | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1) | ||
| IPB054N06N3-G | 신규 및 오리지널 | ||
| IPB054N06N3G | Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G) | ||
| IPB054N06N3GATMA1 , 2SD1 | 신규 및 오리지널 | ||
| IPB054N08N3 | 신규 및 오리지널 | ||
| IPB054N08N3G | MOSFET, N-CH, 80V, 80A, TO-263-3 | ||
| IPB054N08N3G,054N08N | 신규 및 오리지널 | ||
| IPB054N08N3GS | 신규 및 오리지널 | ||
| IPB054N06N3 G | IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | ||
| IPB054N08N3 G | IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 |