 | |  | |
| PartNumber | IPB093N04L G | IPB093N04LG | IPB093N04LGATMA1 |
| Description | Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 40V 50A TO263-3 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| IPB093N04L G | 신규 및 오리지널 | ||
| IPB093N04LG | Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Infineon Technologies |
IPB093N04LGATMA1 | MOSFET N-CH 40V 50A TO263-3 |