IPB100N04S3

IPB100N04S3-03 vs IPB100N04S303ATMA1 vs IPB100N04S3-03M

 
PartNumberIPB100N04S3-03IPB100N04S303ATMA1IPB100N04S3-03M
DescriptionMOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-TMOSFET N-CHANNEL_30/40V
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation214 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-T--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time17 ns--
Product TypeMOSFETMOSFET-
Rise Time16 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time30 ns--
Part # AliasesIPB100N04S303ATMA1 IPB1N4S33XT SP000260847IPB100N04S3-03 IPB1N4S33XT SP000260847-
Unit Weight0.139332 oz0.139332 oz-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPB100N04S3-03 MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T
IPB100N04S303ATMA1 MOSFET N-CH 40V 100A TO263-3
Infineon Technologies
Infineon Technologies
IPB100N04S303ATMA1 MOSFET N-CHANNEL_30/40V
IPB100N04S3-03M 신규 및 오리지널
IPB100N04S3-03 IGBT Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T
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