IPB117

IPB117N20NFD vs IPB117N20NFDATMA1 vs IPB117N20NFDATMA1-CUT TAPE

 
PartNumberIPB117N20NFDIPB117N20NFDATMA1IPB117N20NFDATMA1-CUT TAPE
DescriptionMOSFET N-Ch 200V 84A D2PAK-2MOSFET N-Ch 200V 84A D2PAK-2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current84 A84 A-
Rds On Drain Source Resistance10.3 mOhms10.3 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge87 nC87 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W300 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS Fast DiodeOptiMOS Fast Diode-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min70 S70 S-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesIPB117N20NFDATMA1 SP001107232IPB117N20NFD SP001107232-
Unit Weight0.068654 oz0.068654 oz-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPB117N20NFD MOSFET N-Ch 200V 84A D2PAK-2
IPB117N20NFDATMA1 MOSFET N-Ch 200V 84A D2PAK-2
IPB117N20NFDATMA1 IGBT Transistors MOSFET N-Ch 200V 84A D2PAK-2
IPB117N20NFDATMA1-CUT TAPE 신규 및 오리지널
IPB117N20NFD Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R
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