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| PartNumber | IPB65R110CFDA | IPB65R110CFDAATMA1 | IPB65R110CFDATMA1 |
| Description | MOSFET N-Ch 650V 99.6A D2PAK-2 | MOSFET N-Ch 650V 99.6A D2PAK-2 | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 31.2 A | 31.2 A | 31.2 A |
| Rds On Drain Source Resistance | 99 mOhms | 99 mOhms | 99 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | 3.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 118 nC | 118 nC | 118 nC |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 277.8 W | 277.8 W | 277.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | CoolMOS CFDA | CoolMOS CFDA | CoolMOS CFDA |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 6 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | 11 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 68 ns | 68 ns | 68 ns |
| Typical Turn On Delay Time | 16 ns | 16 ns | 16 ns |
| Part # Aliases | IPB65R110CFDAATMA1 IPB65R11CFDAXT SP000896402 | IPB65R110CFDA IPB65R11CFDAXT SP000896402 | IPB65R110CFD IPB65R11CFDXT SP000896400 |
| Unit Weight | - | 0.068654 oz | 0.139332 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R110CFDA | MOSFET N-Ch 650V 99.6A D2PAK-2 | |
| IPB65R110CFDAATMA1 | MOSFET N-Ch 650V 99.6A D2PAK-2 | ||
| IPB65R110CFDATMA1 | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | ||
| IPB65R110CFDATMA2 | MOSFET | ||
| IPB65R110CFDATMA2 | HIGH POWER_LEGACY | ||
| IPB65R110CFDATMA1 | MOSFET N-CH 650V 31.2A TO263 | ||
| IPB65R110CFDAATMA1 | RF Bipolar Transistors MOSFET N-Ch 650V 99.6A D2PAK-2 | ||
| IPB65R110CFDA | Trans MOSFET N-CH 650V 31.2A 3-Pin TO-263 T/R (Alt: IPB65R110CFDA) | ||
| IPB65R110CFDA 65F6110A | 신규 및 오리지널 | ||
| IPB65R110CFDA , 2SD1950- | 신규 및 오리지널 |