 | | | |
| PartNumber | IPB80P04P4L-08 | IPB80P04P4L-04 | IPB80P04P4L-06 |
| Description | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 80 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 7.9 mOhms | 4.4 mOhms | 5.5 mOhms |
| Vgs Gate Source Voltage | 16 V | 16 V | 16 V |
| Qg Gate Charge | 71 nC | 135 nC | 104 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 75 W | 125 W | 88 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 35 ns | 65 ns | 44 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 13 ns | 12 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | 119 ns | 61 ns |
| Typical Turn On Delay Time | 12 ns | 28 ns | 17 ns |
| Part # Aliases | IPB80P04P4L08ATMA1 IPB8P4P4L8XT SP000840208 | IPB80P04P4L04ATMA1 IPB8P4P4L4XT SP000840196 | IPB80P04P4L06ATMA1 IPB8P4P4L6XT SP000842046 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | - | 2.2 V |
| Channel Mode | - | - | Enhancement |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80P04P4L-08 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | |
| IPB80P04P4L-04 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | ||
| IPB80P04P4L-06 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | ||
| IPB80P04P4L-04 | P- CHANNEL AUTOMOTIVE MOSF (Alt: IPB80P04P4L-04) |