 |  | | |
| PartNumber | IPD30N06S215ATMA2 | IPD30N06S215ATMA1 | IPD30N06S215 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 11.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 19 ns | - | 19 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 28 ns | - | 28 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | 32 ns |
| Typical Turn On Delay Time | 13 ns | - | 13 ns |
| Part # Aliases | IPD30N06S2-15 SP001061724 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPD30N06S2-15 SP001061724 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 136 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 30 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 11.3 mOhms |
| Qg Gate Charge | - | - | 41 nC |
| Forward Transconductance Min | - | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD30N06S215ATMA2 | MOSFET N-CHANNEL_55/60V | |
| IPD30N06S215ATMA2 | MOSFET N-CH 55V 30A TO252-3 | ||
| IPD30N06S215ATMA1 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | ||
| IPD30N06S215ATMA2-CUT TAPE | 신규 및 오리지널 | ||
| IPD30N06S215 | 신규 및 오리지널 |