IPD50R3K

IPD50R3K0CEAUMA1 vs IPD50R3K0CEBTMA1 vs IPD50R3K0CE

 
PartNumberIPD50R3K0CEAUMA1IPD50R3K0CEBTMA1IPD50R3K0CE
DescriptionMOSFET CONSUMERMOSFET N-Ch 500V 1.7A DPAK-2MOSFET N-Ch 500V 1.7A DPAK-2
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Vds Drain Source Breakdown Voltage500 V500 V-
TradenameCoolMOSCoolMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS CEIPD50R3XPD50R3
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPD50R3K0CE SP001396826IPD50R3K0CEBTMA1 SP000992074-
Unit Weight0.011993 oz0.139332 oz0.139332 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Id Continuous Drain Current-2.6 A-
Rds On Drain Source Resistance-2.7 Ohms-
Vgs th Gate Source Threshold Voltage-2.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-4.3 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-26 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel1 N-Channel
Fall Time-49 ns-
Rise Time-5.8 ns-
Typical Turn Off Delay Time-23 ns-
Typical Turn On Delay Time-7.3 ns-
Part Aliases--IPD50R3K0CEBTMA1 SP000992074
Package Case--TO-252-3
Vds Drain Source Breakdown Voltage--500 V
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPD50R3K0CEAUMA1 MOSFET CONSUMER
IPD50R3K0CEBTMA1 MOSFET N-Ch 500V 1.7A DPAK-2
IPD50R3K0CE MOSFET N-Ch 500V 1.7A DPAK-2
Infineon Technologies
Infineon Technologies
IPD50R3K0CEAUMA1 MOSFET N-CH 500V 1.7A PG-TO-252
IPD50R3K0CEBTMA1 IGBT Transistors MOSFET N-Ch 500V 1.7A DPAK-2
IPD50R3K0CEBTMA1 , 2SD22 신규 및 오리지널
IPD50R3K0CEBTMA1074 - Bulk (Alt: IPD50R3K0CEBTMA1074)
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