PartNumber | IPD50R3K0CEAUMA1 | IPD50R3K0CEBTMA1 | IPD50R3K0CE |
Description | MOSFET CONSUMER | MOSFET N-Ch 500V 1.7A DPAK-2 | MOSFET N-Ch 500V 1.7A DPAK-2 |
Manufacturer | Infineon | Infineon | INFINEON |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS CE | IPD50R3 | XPD50R3 |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPD50R3K0CE SP001396826 | IPD50R3K0CEBTMA1 SP000992074 | - |
Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Id Continuous Drain Current | - | 2.6 A | - |
Rds On Drain Source Resistance | - | 2.7 Ohms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 4.3 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 26 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 49 ns | - |
Rise Time | - | 5.8 ns | - |
Typical Turn Off Delay Time | - | 23 ns | - |
Typical Turn On Delay Time | - | 7.3 ns | - |
Part Aliases | - | - | IPD50R3K0CEBTMA1 SP000992074 |
Package Case | - | - | TO-252-3 |
Vds Drain Source Breakdown Voltage | - | - | 500 V |