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| PartNumber | IPD60R2K1CEBTMA1 | IPD60R2K1CEAUMA1 | IPD60R2K1CE |
| Description | MOSFET N-Ch 600V 2.3A DPAK-2 | MOSFET N-CH 600V 2.3A TO-252-3 | 600VCoolMOSªCEPowerTransistor (Alt: IPD60R2K1CE) |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2.3 A | - | - |
| Rds On Drain Source Resistance | 2.1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.7 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 22 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | IPD60R2K1CEBTMA1 SP001276038 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R2K1CEBTMA1 | MOSFET N-Ch 600V 2.3A DPAK-2 | |
Infineon Technologies |
IPD60R2K1CEAUMA1 | MOSFET N-CH 600V 2.3A TO-252-3 | |
| IPD60R2K1CEBTMA1 | MOSFET N-CH 600V TO-252-3 | ||
| IPD60R2K1CE | 600VCoolMOSªCEPowerTransistor (Alt: IPD60R2K1CE) | ||
| IPD60R2K1CEBTMA1 , 2SD23 | 신규 및 오리지널 |