 |  |  | |
| PartNumber | IPD640N06L G | IPD640N06LGXT | IPD640N06LGBTMA1 |
| Description | MOSFET N-Ch 60V 18A DPAK-2 | Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD640N06LGBTMA1) | MOSFET N-CH 60V 18A TO-252 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 64 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 47 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 32 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | IPD640N06LGBTMA1 IPD64N6LGXT SP000443766 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD640N06L G | MOSFET N-Ch 60V 18A DPAK-2 | |
| IPD640N06LGBTMA1 | MOSFET N-CH 60V 18A TO-252 | ||
| IPD640N06L G | IGBT Transistors MOSFET N-Ch 60V 18A DPAK-2 | ||
| IPD640N06LGXT | Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD640N06LGBTMA1) | ||
| IPD640N06L | 신규 및 오리지널 | ||
| IPD640N06LG | 신규 및 오리지널 |