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| PartNumber | IPD65R1K4CFD | IPD65R1K4CFDATMA2 | IPD65R1K4CFDATMA1 |
| Description | MOSFET N-Ch 700V 8.2A DPAK-2 | MOSFET | MOSFET N-CH 650V 2.8A TO-252 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 2.8 A | - | - |
| Rds On Drain Source Resistance | 1.26 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 28.4 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | XPD65R1 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 18.2 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | IPD65R1K4CFDBTMA1 SP000953126 | SP001977046 | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 | |
| IPD65R1K4CFDBTMA1 | MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R1K4CFDATMA2 | MOSFET | ||
| IPD65R1K4CFDATMA1 | MOSFET N-CH 650V 2.8A TO-252 | ||
| IPD65R1K4CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R1K4CFDBTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 |