 | |  | |
| PartNumber | IPD65R660CFDA | IPD65R660CFDATMA1 | IPD65R660CFDAATMA1 |
| Description | MOSFET N-Ch 650V 6A DPAK-2 | MOSFET LOW POWER_LEGACY | MOSFET N-CH TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 6 A | 6 A | - |
| Rds On Drain Source Resistance | 594 mOhms | 594 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 20 nC | 22 nC | - |
| Minimum Operating Temperature | - 40 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 62.5 W | 62.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CFDA | CoolMOS CFDA | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | IPD65R660CFDAATMA1 IPD65R66CFDAXT SP000928260 | IPD65R660CFD SP001117748 | - |
| Unit Weight | 0.011993 oz | 0.139332 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R660CFDA | MOSFET N-Ch 650V 6A DPAK-2 | |
| IPD65R660CFDATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD65R660CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R660CFDAATMA1 | MOSFET N-CH TO252-3 | ||
| IPD65R660CFDATMA1 | MOSFET N-CH 650V 6A TO252 | ||
| IPD65R660CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R660CFDA | MOSFET N-Ch 650V 6A DPAK-2 |