PartNumber | IPG20N06S4L-11 | IPG20N06S4L-26 | IPG20N06S4L-26A |
Description | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 55V 20A TDSON-8 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | PG-TDSON-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 20 A | 20 A | 20 A |
Rds On Drain Source Resistance | 11.2 mOhms | 21 mOhms, 21 mOhms | 26 mOhms |
Vgs Gate Source Voltage | 16 V | 16 V | 10 V |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 65 W | 33 W | 33 W |
Configuration | Dual | Dual | Dual |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPG20N06S4L11ATMA1 IPG2N6S4L11XT SP000705550 | IPG20N06S4L26ATMA1 IPG2N6S4L26XT SP000705588 | IPG20N06S4L26AATMA1 SP001023848 |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Qg Gate Charge | - | 20 nC, 20 nC | 15 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | OptiMOS | OptiMOS |
Series | - | OptiMOS-T2 | OptiMOS-T2 |
Fall Time | - | 10 ns, 10 ns | 10 ns |
Rise Time | - | 1.5 ns, 1.5 ns | 1.5 ns |
Typical Turn Off Delay Time | - | 18 ns, 18 ns | 18 ns |
Typical Turn On Delay Time | - | 5 ns, 5 ns | 5 ns |