IPI084 stock, IPI084, IPI084N06L3GXKSA1


PartNumber	IPI084N06L3GXKSA1	IPI084N06L3 G	IPI084N06L3G
Description	MOSFET N-Ch 60V 50A I2PAK-3	MOSFET N-Ch 60V 50A I2PAK-3
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-262-3	TO-262-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	60 V	60 V	-
Id Continuous Drain Current	50 A	50 A	-
Rds On Drain Source Resistance	7 mOhms	7 mOhms	-
Vgs th Gate Source Threshold Voltage	1.2 V	1.2 V	-
Vgs Gate Source Voltage	20 V	20 V	-
Qg Gate Charge	29 nC	29 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C	-
Pd Power Dissipation	79 W	79 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	OptiMOS	OptiMOS	-
Packaging	Tube	Tube	-
Height	9.45 mm	9.45 mm	-
Length	10.2 mm	10.2 mm	-
Series	OptiMOS 3	OptiMOS 3	-
Transistor Type	1 N-Channel	1 N-Channel	-
Width	4.5 mm	4.5 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Forward Transconductance Min	35 S	35 S	-
Fall Time	7 ns	7 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	26 ns	26 ns	-
Factory Pack Quantity	500	500	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	37 ns	37 ns	-
Typical Turn On Delay Time	15 ns	15 ns	-
Part # Aliases	G IPI084N06L3 SP001065242	IPI084N06L3GXKSA1 SP001065242	-
Unit Weight	0.073511 oz	0.070548 oz	-

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IPI084