 | | | |
| PartNumber | IPI300N25N3G | IPI320N203G | IPI320N20N3 |
| Description | - Bulk (Alt: IPI320N203G) | ||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS 3 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPI320N20N3GAKSA1 IPI320N20N3GXK SP000714312 |
| Unit Weight | - | - | 0.084199 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | I2PAK-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 136 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 4 ns |
| Rise Time | - | - | 9 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 34 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 32 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 21 nS |
| Qg Gate Charge | - | - | 22 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI320N20N3 G | MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3 | |
| IPI320N20N3GAKSA1 | MOSFET N-CH 200V 34A TO262-3 | ||
| IPI35CN10N G | MOSFET N-CH 100V 27A TO262-3 | ||
| IPI300N25N3G | 신규 및 오리지널 | ||
| IPI320N203G | - Bulk (Alt: IPI320N203G) | ||
| IPI320N20N3 | 신규 및 오리지널 | ||
| IPI320N20N3G | 신규 및 오리지널 | ||
| IPI35CN10NG | 신규 및 오리지널 | ||
| IPI320N20N3 G | Darlington Transistors MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3 |