| PartNumber | IPI80N06S3-05 | IPI80N06S3-07 | IPI80N06S3L-05 |
| Description | MOSFET N-Ch 55V 80A I2PAK-3 | MOSFET N-Ch 55V 80A I2PAK-3 | MOSFET N-CH 55V 80A TO-262 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 5.4 mOhms | 6.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 165 W | 135 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 47 ns | 33 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 50 ns | 41 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 46 ns | 34 ns | - |
| Typical Turn On Delay Time | 37 ns | 30 ns | - |
| Part # Aliases | IPI80N06S305XK | IPI80N06S307XK | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | - |