 | |  | |
| PartNumber | IPP08CNE8N G | IPP08CN10N G | IPP08CN10L G |
| Description | MOSFET N-Ch 85V 95A TO220-3 | MOSFET N-Ch 100V 95A TO220-3 | MOSFET N-CH 100V 98A TO220-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 85 V | 100 V | - |
| Id Continuous Drain Current | 95 A | 95 A | - |
| Rds On Drain Source Resistance | 6.4 mOhms | 8.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 167 W | 167 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | 24 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 26 ns | 26 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Part # Aliases | IPP08CNE8NGXK | IPP08CN10NGXK | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP093N06N3 G | MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3 | |
| IPP093N06N3GXKSA1 | MOSFET N-CH 60V 50A TO220-3 | ||
| IPP08CN10L G | MOSFET N-CH 100V 98A TO220-3 | ||
| IPP08CNE8N G | MOSFET N-CH 85V 95A TO-220 | ||
| IPP093N06N3GHKSA1 | MOSFET N-CH 60V 50A TO220-3 | ||
| IPP08CN10N G | MOSFET N-CH 100V 95A TO-220 | ||
| IPP09N03LA | MOSFET N-CH 25V 50A TO-220AB | ||
| IPP096N03L G | IGBT Transistors MOSFET N-Ch 30V 35A TO220-3 OptiMOS 3 | ||
Infineon Technologies |
IPP096N03L G | MOSFET N-Ch 30V 35A TO220-3 OptiMOS 3 | |
| IPP08CNE8N G | MOSFET N-Ch 85V 95A TO220-3 | ||
| IPP093N06N3GHKSA1 | MOSFET | ||
| IPP093N06N3GXKSA1 | MOSFET MV POWER MOS | ||
| IPP08CN10N G | MOSFET N-Ch 100V 95A TO220-3 | ||
| IPP09N03LA 09N03LA | 신규 및 오리지널 | ||
| IPP08CN10LG | 신규 및 오리지널 | ||
| IPP08CN10N | 신규 및 오리지널 | ||
| IPP08CN10N,08CN10N | 신규 및 오리지널 | ||
| IPP08CN10NG | 신규 및 오리지널 | ||
| IPP08CN10NG,IPP08CN10N,0 | 신규 및 오리지널 | ||
| IPP08CN10NG. | 신규 및 오리지널 | ||
| IPP08CN15N | 신규 및 오리지널 | ||
| IPP08CNE8NG,08CNE8N | 신규 및 오리지널 | ||
| IPP08N06N | 신규 및 오리지널 | ||
| IPP093N06N3G(093N06N) | 신규 및 오리지널 | ||
| IPP096N03L | 신규 및 오리지널 | ||
| IPP096N03LG | 신규 및 오리지널 | ||
| IPP096N03LG,096N03L | 신규 및 오리지널 | ||
| IPP09N03LA/PSI | 신규 및 오리지널 | ||
| IPP08CNE8NG | Power Field-Effect Transistor, 95A I(D), 85V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP096N03LGHKSA1 | - Bulk (Alt: IPP096N03LGHKSA1) | ||
| IPP09N03LAG | 신규 및 오리지널 |