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| PartNumber | IPP052NE7N3 G | IPP052NE7N3G | IPP052NE7N3 |
| Description | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Infineon | INFINEON | INFINEON TECHNOLOGIES |
| Product Category | MOSFET | FETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 5.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 51 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Tube | - | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 103 S, 52 S | - | - |
| Fall Time | 8 ns | - | 8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | 11 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | 30 ns |
| Typical Turn On Delay Time | 14 ns | - | 14 ns |
| Part # Aliases | IPP052NE7N3GXKSA1 IPP52NE7N3GXK SP000641726 | - | - |
| Unit Weight | 0.211644 oz | - | 0.211644 oz |
| Part Aliases | - | - | IPP052NE7N3GXK IPP052NE7N3GXKSA1 SP000641726 |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 75 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.1 V |
| Rds On Drain Source Resistance | - | - | 5.2 mOhms |
| Qg Gate Charge | - | - | 51 nC |
| Forward Transconductance Min | - | - | 103 S 52 S |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP052NE7N3 G | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | |
| IPP052NE7N3GXKSA1 | MOSFET N-CH 75V 80A TO220-3 | ||
| IPP052NE7N3GHKSA1 | MOSFET N-CH 75V 80A TO220-3 | ||
| IPP052NE7N3G | Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP052NE7N3GXK | Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP052NE7N3GXKSA1) | ||
| IPP052NE7N3 | 신규 및 오리지널 | ||
| IPP052NE7N3G(052NE7N) | 신규 및 오리지널 | ||
| IPP052NE7N3G,052NE7N | 신규 및 오리지널 | ||
| IPP052NE7N3 G | IGBT Transistors MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 |