IRF2805S

IRF2805STRLPBF vs IRF2805STRRPBF vs IRF2805SPBF

 
PartNumberIRF2805STRLPBFIRF2805STRRPBFIRF2805SPBF
DescriptionMOSFET MOSFT 55V 135A 4.7mOhm 150nCMOSFET N-CH 55V 135A D2PAKDarlington Transistors MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263AB-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current135 A--
Rds On Drain Source Resistance4.7 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation200 W--
ConfigurationSingle-Single
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min91 S--
Fall Time110 ns-110 ns
Product TypeMOSFET--
Rise Time120 ns-120 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns-68 ns
Typical Turn On Delay Time14 ns-14 ns
Part # AliasesSP001561594--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--200 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--135 A
Vds Drain Source Breakdown Voltage--55 V
Vgs th Gate Source Threshold Voltage--2 V to 4 V
Rds On Drain Source Resistance--4.7 mOhms
Qg Gate Charge--150 nC
Forward Transconductance Min--91 S
Channel Mode--Enhancement
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRF2805STRLPBF MOSFET MOSFT 55V 135A 4.7mOhm 150nC
IRF2805STRRPBF MOSFET N-CH 55V 135A D2PAK
IRF2805STRLPBF MOSFET N-CH 55V 135A D2PAK
IRF2805SPBF Darlington Transistors MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC
IRF2805S 신규 및 오리지널
IRF2805STRPBF 신규 및 오리지널
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