IRF3

IRF3709ZSPBF vs IRF3709ZS vs IRF3709ZSTRL

 
PartNumberIRF3709ZSPBFIRF3709ZSIRF3709ZSTRL
DescriptionMOSFET 30V 1 N-CH 6.3mOhm HEXFET 17nCMOSFET N-CH 30V 87A D2PAKMOSFET N-CH 30V 87A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current87 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage2.25 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width9.25 mm--
BrandInfineon / IR--
Forward Transconductance Min88 S--
Fall Time4.7 ns--
Product TypeMOSFET--
Rise Time41 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP001551038--
Unit Weight0.139332 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRF3710ZPBF MOSFET MOSFT 100V 59A 18mOhm 82nC Qg
IRF3710STRLPBF MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRF3710PBF MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRF3709ZSTRRPBF MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
IRF3710LPBF MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRF3710STRRPBF MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
IRF3710ZLPBF MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
IRF3710ZPBF MOSFET N-CH 100V 59A TO-220AB
IRF3709ZS MOSFET N-CH 30V 87A D2PAK
IRF3709ZSTRL MOSFET N-CH 30V 87A D2PAK
IRF3709ZSTRR MOSFET N-CH 30V 87A D2PAK
IRF3710L MOSFET N-CH 100V 57A TO-262
IRF3710STRR MOSFET N-CH 100V 57A D2PAK
IRF3710ZGPBF MOSFET N-CH 100V 59A TO-220AB
IRF3709ZSTRLPBF MOSFET N-CH 30V 87A D2PAK
IRF3709ZSPBF MOSFET N-CH 30V 87A D2PAK
IRF3710PBF MOSFET N-CH 100V 57A TO-220AB
IRF3710SPBF MOSFET N-CH 100V 57A D2PAK
IRF3710STRLPBF MOSFET N-CH 100V 57A D2PAK
IRF3710STRRPBF MOSFET N-CH 100V 57A D2PAK
IRF3710ZSTRLPBF MOSFET N-CH 100V 59A D2PAK
IRF3710ZLPBF Darlington Transistors MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
IRF3710LPBF Darlington Transistors MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRF3710ZSPBF IGBT Transistors MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
IRF3709ZSTRRPBF MOSFET N-CH 30V 87A D2PAK
Infineon / IR
Infineon / IR
IRF3710ZSTRLPBF MOSFET MOSFT 100V 59A 18mOhm 82nC Qg
IRF3709ZSPBF MOSFET 30V 1 N-CH 6.3mOhm HEXFET 17nC
IRF3710ZSPBF MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
Infineon Technologies
Infineon Technologies
IRF3710SPBF MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
IRF3710STRLPBF AOB298L 신규 및 오리지널
IRF3710 MOSFET Transistor, N-Channel, TO-220AB
IRF3710S MOSFET Transistor, N-Channel, TO-263AB
IRF3710STR 신규 및 오리지널
IRF3710Z 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF3710STRLPBF-CUT TAPE 신규 및 오리지널
IRF3710STRRPBF-CUT TAPE 신규 및 오리지널
IRF3710ZPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:59A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.018ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
IRF3710 T0-220 신규 및 오리지널
IRF3710PBF(ROHS) 신규 및 오리지널
IRF3710PBF,IRF3710 신규 및 오리지널
IRF3710PBF,IRF3710, 신규 및 오리지널
IRF3710PBF,IRF3710,F3710 신규 및 오리지널
IRF3710PBF,IRF3710STRLPB 신규 및 오리지널
IRF3710PBF,IRF3710STRLPBF,IRFR3710ZTRLPBF,IRF 신규 및 오리지널
IRF3710PBF-CN 신규 및 오리지널
IRF3710PBF-PHI 신규 및 오리지널
IRF3710PBF. PLANAR_MOSFETS ROHS COMPLIANT: YES
IRF3710SPBF,IRF3710STRLP 신규 및 오리지널
IRF3710STRLPBF,IRF3710ZS 신규 및 오리지널
IRF3710Z,IRF3710ZS,IRF37 신규 및 오리지널
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