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| PartNumber | IRF530NSTRLPBF | IRF530NSTRL | IRF530NSTRLPBF,IRF530NS, |
| Description | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 17 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET | |
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 12 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 9.2 ns | - | - |
| Part # Aliases | SP001563332 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF530NSTRLPBF | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | |
| IRF530NSTRRPBF | MOSFET N-CH 100V 17A D2PAK | ||
| IRF530NSTRLPBF | MOSFET N-CH 100V 17A D2PAK | ||
| IRF530NSTRLPBF-CUT TAPE | 신규 및 오리지널 | ||
| IRF530NSTRR | 신규 및 오리지널 | ||
| IRF530NSTRL | 17 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| IRF530NSTRLPBF,IRF530NS, | 신규 및 오리지널 | ||
| IRF530NSTRLPBF,IRF530NSP | 신규 및 오리지널 | ||
| IRF530NSTRPBF | 신규 및 오리지널 |