IRF7322

IRF7322D1PBF vs IRF7322D1PBF. vs IRF7322BMF-TR

 
PartNumberIRF7322D1PBFIRF7322D1PBF.IRF7322BMF-TR
DescriptionMOSFET 20V FETKY 12 VGS 98 RDS 2.7VmOhm
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.3 A--
Rds On Drain Source Resistance62 mOhms--
Vgs th Gate Source Threshold Voltage700 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 P-Channel--
TypeFETKY MOSFET & Schottky Diode--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min5.9 S--
Fall Time49 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSP001572002--
Unit Weight0.019048 oz--
제조사 부분 # 설명 RFQ
Infineon / IR
Infineon / IR
IRF7322D1PBF MOSFET 20V FETKY 12 VGS 98 RDS 2.7VmOhm
IRF7322D1TRPBF. 신규 및 오리지널
IRF7322D1PBF. 신규 및 오리지널
IRF7322BMF-TR 신규 및 오리지널
IRF7322 신규 및 오리지널
IRF7322TR 신규 및 오리지널
IRF7322TRPBF 신규 및 오리지널
Infineon Technologies
Infineon Technologies
IRF7322D1 MOSFET P-CH 20V 5.3A 8-SOIC
IRF7322D1TR MOSFET P-CH 20V 5.3A 8-SOIC
IRF7322D1PBF IGBT Transistors MOSFET 20V FETKY 12 VGS 98 RDS 2.7VmOhm
IRF7322D1TRPBF IGBT Transistors MOSFET MOSFT PCh w/Schttky -5.3A 62mOhm 19nC
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