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| PartNumber | IRF7341Q | IRF7341QPBF | IRF7341QTRPBF |
| Description | POWER FIELD-EFFECT TRANSISTOR, 5.1A I(D), 55V, 0.05OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | MOSFET, Power, Dual N-Ch, VDSS 55V, RDS(ON) 0.05Ohm, ID 5.1A, SO-8, PD 2.4W, VGS +/-20V | MOSFET 2N-CH 55V 5.1A 8-SOIC |
| Manufacturer | IR | IR | Infineon Technologies |
| Product Category | FETs - Arrays | IC Chips | FETs - Arrays |
| Series | - | - | HEXFETR |
| Packaging | - | - | Digi-ReelR |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2.4W |
| Drain to Source Voltage Vdss | - | - | 55V |
| Input Capacitance Ciss Vds | - | - | 780pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 5.1A |
| Rds On Max Id Vgs | - | - | 50 mOhm @ 5.1A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 44nC @ 10V |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| IRF7341Q | POWER FIELD-EFFECT TRANSISTOR, 5.1A I(D), 55V, 0.05OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | ||
| IRF7341QPBF | MOSFET, Power, Dual N-Ch, VDSS 55V, RDS(ON) 0.05Ohm, ID 5.1A, SO-8, PD 2.4W, VGS +/-20V | ||
Infineon Technologies |
IRF7341QTRPBF | MOSFET 2N-CH 55V 5.1A 8-SOIC |