| PartNumber | IRF7470TRPBF | IRF7470PBF | IRF7470TR |
| Description | MOSFET MOSFT 40V 11A 13mOhm 29nC | MOSFET N-CH 40V 10A 8-SOIC | MOSFET N-CH 40V 10A 8-SOIC |
| Manufacturer | Infineon | International Rectifier | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 13 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 29 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Packaging | Reel | Tube | Digi-ReelR Alternate Packaging |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 27 S | - | - |
| Fall Time | 3.2 ns | 3.2 ns | 3.2 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 1.9 ns | 1.9 ns | 1.9 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | 21 ns | 21 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Part # Aliases | SP001570336 | - | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |
| Package Case | - | SOIC-8 | 8-SOIC (0.154", 3.90mm Width) |
| Pd Power Dissipation | - | 2.5 W | 2.5 W |
| Vgs Gate Source Voltage | - | 12 V | 12 V |
| Id Continuous Drain Current | - | 11 A | 10 A |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Vgs th Gate Source Threshold Voltage | - | 0.8 V to 2 V | 2 V |
| Rds On Drain Source Resistance | - | 15 mOhms | 13 mOhms |
| Qg Gate Charge | - | 29 nC | 29 nC |
| Forward Transconductance Min | - | 27 S | 27 S |
| Channel Mode | - | Enhancement | - |
| Series | - | - | HEXFETR |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 2.5W |
| Drain to Source Voltage Vdss | - | - | 40V |
| Input Capacitance Ciss Vds | - | - | 3430pF @ 20V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 10A (Ta) |
| Rds On Max Id Vgs | - | - | 13 mOhm @ 10A, 10V |
| Vgs th Max Id | - | - | 2V @ 250μA |
| Gate Charge Qg Vgs | - | - | 44nC @ 4.5V |