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| PartNumber | IRF7759L2TRPBF | IRF7759L2TR1PBF |
| Description | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | MOSFET 75V 160A 2.3mOhm 220nC Qg |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-L8 | DirectFET-L8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V |
| Id Continuous Drain Current | 160 A | 160 A |
| Rds On Drain Source Resistance | 1.8 mOhms | 1.8 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 200 nC | 200 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 125 W | 125 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | DirectFET | - |
| Packaging | Reel | Reel |
| Height | 0.74 mm | 0.74 mm |
| Length | 9.15 mm | 9.15 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 7.1 mm | 7.1 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Fall Time | 33 ns | 33 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 87 ns | 37 ns |
| Factory Pack Quantity | 4000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | - |
| Typical Turn On Delay Time | 18 ns | - |
| Part # Aliases | SP001563710 | SP001566426 |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Forward Transconductance Min | - | 74 S |
| Unit Weight | - | 0.035274 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF7759L2TRPBF | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | |
| IRF7759L2TR1PBF | MOSFET N-CH 75V 375A DIRECTFET | ||
| IRF7759L2TRPBF | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | ||
Infineon / IR |
IRF7759L2TR1PBF | MOSFET 75V 160A 2.3mOhm 220nC Qg | |
| IRF7759L2TRPBF-CUT TAPE | 신규 및 오리지널 |