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| PartNumber | IRF8252PBF | IRF8252TRPBF | IRF8252PBF-1 |
| Description | MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC | MOSFET MOSFT 25V 25A 2.7mOhm 35nC Qg | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 25 A | 25 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 35 nC | 35 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Reel | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 89 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 95 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Part # Aliases | SP001554466 | SP001572226 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |