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| PartNumber | IRF9520PBF | IRF9520STRLPBF | IRF9520STRRPBF |
| Description | MOSFET P-CH -100V HEXFET MOSFET | MOSFET P-CH -100V HEXFET MOSFET | MOSFET P-Chan 100V 6.8 Amp |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | TO-220AB-3 | - | TO-263-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 6.8 A | - | - |
| Rds On Drain Source Resistance | 600 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Reel | Reel |
| Height | 15.49 mm | - | 4.83 mm |
| Length | 10.41 mm | - | 10.67 mm |
| Series | IRF | IRF | IRF |
| Transistor Type | 1 P-Channel | - | - |
| Width | 4.7 mm | - | 9.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 2 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | - | - |
| Factory Pack Quantity | 50 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 9.6 ns | - | - |
| Unit Weight | 0.211644 oz | 0.050717 oz | 0.050717 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF9520PBF | MOSFET P-CH -100V HEXFET MOSFET | |
| IRF9520STRLPBF | MOSFET P-CH -100V HEXFET MOSFET | ||
| IRF9520STRRPBF | MOSFET P-Chan 100V 6.8 Amp | ||
| IRF9530 | MOSFET RECOMMENDED ALT 844-IRF9530PBF | ||
Infineon Technologies |
IRF9520NPBF | MOSFET PLANAR_MOSFETS | |
| IRF9520NLPBF | MOSFET P-CH 100V 6.8A TO262-3 | ||
| IRF9520NSTRR | MOSFET P-CH 100V 6.8A D2PAK | ||
| IRF9520NL | MOSFET P-CH 100V 6.8A TO-262 | ||
| IRF9520NPBF | MOSFET P-CH 100V 6.8A TO-220AB | ||
| IRF9520NS | MOSFET P-CH 100V 6.8A D2PAK | ||
| IRF9520NSTRL | MOSFET P-CH 100V 6.8A D2PAK | ||
| IRF9530NL | MOSFET P-CH 100V 14A TO-262 | ||
| IRF9520NSPBF | Darlington Transistors MOSFET MOSFT PCh -100V -6.8A 480mOhm 18nC | ||
Infineon / IR |
IRF9520NSPBF | MOSFET MOSFT PCh -100V -6.8A 480mOhm 18nC | |
Vishay |
IRF9520L | MOSFET P-CH 100V 6.8A TO-262 | |
| IRF9530L | MOSFET P-CH 100V 12A TO-262 | ||
| IRF9510STRR | MOSFET P-CH 100V 4A D2PAK | ||
| IRF9520 | MOSFET P-CH 100V 6.8A TO-220AB | ||
| IRF9520PBF | MOSFET P-CH 100V 6.8A TO-220AB | ||
| IRF9520S | MOSFET P-CH 100V 6.8A D2PAK | ||
| IRF9520STRL | MOSFET P-CH 100V 6.8A D2PAK | ||
| IRF9520STRR | MOSFET P-CH 100V 6.8A D2PAK | ||
| IRF9530 | MOSFET P-CH 100V 12A TO-220AB | ||
| IRF9510STRLPBF | Darlington Transistors MOSFET P-Chan 100V 4.0 Amp | ||
| IRF9520SPBF | Darlington Transistors MOSFET P-Chan 100V 6.8 Amp | ||
| IRF9520STRLPBF | IGBT Transistors MOSFET P-Chan 100V 6.8 Amp | ||
| IRF9520STRRPBF | IGBT Transistors MOSFET P-Chan 100V 6.8 Amp | ||
| IRF9520S F9520S | 신규 및 오리지널 | ||
| IRF9510STRRPBF | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF9510STRRPBF) | ||
| IRF9511 | Power Field-Effect Transistor, 3A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF9512 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF9513 | 2.5 A, 80 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | ||
| IRF9520GPBF | 신규 및 오리지널 | ||
| IRF9520N | INSTOCK | ||
| IRF9520N,IRF9520NPBF | 신규 및 오리지널 | ||
| IRF9520NPBF,F9520N,IRF95 | 신규 및 오리지널 | ||
| IRF9520NPBF,IRF9520N | 신규 및 오리지널 | ||
| IRF9520NSTRLPBF. | 신규 및 오리지널 | ||
| IRF9520NSTRPBF | 신규 및 오리지널 | ||
| IRF9520NSTRRPBF | 신규 및 오리지널 | ||
| IRF9520PBF,IRF9520 | 신규 및 오리지널 | ||
| IRF9521 | 신규 및 오리지널 | ||
| IRF9521(TO-220) | 신규 및 오리지널 | ||
| IRF9521PBF | 신규 및 오리지널 | ||
| IRF9522 | Power Field-Effect Transistor, 5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF9523 | 신규 및 오리지널 | ||
| IRF9530N | MOSFET Transistor, P-Channel, TO-220AB | ||
| IRF9530N MEX | 신규 및 오리지널 | ||
| IRF9530N-IR | 신규 및 오리지널 | ||
| IRF9530NLPBF | MOSFET, P-CHANNEL, -100V, -14A, 200 MOHM, 38.7 NC QG, TO-262 |